PART |
Description |
Maker |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
BF2040R BF2040W BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
75N08 |
VDS=75V,RDS(on)=0.009 VGS=10V,ID=30A VDS=75V,RDS(on)=0.011VGS=4.5V,ID=20A
|
TY Semiconductor Co., Ltd
|
KO8822 |
VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., L...
|
KDC6020C |
N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m
|
TY Semiconductor Co., Ltd
|
ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http:// STMICROELECTRONICS[STMicroelectronics] 意法半导
|
KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|